Intel says goodbye to Silicon Dioxide in new 45 nanometer fab

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Intel says goodbye to Silicon Dioxide in new 45 nanometer fab

40:21 | Robert Scoble | Jan 26th, 2007 9:00pm |

Moore’s Law is very much alive, according to Intel Senior Fellow, Mark Bohr. He gave me a tour of Intel’s newest 45 nanometer fab. This is a very rare look inside Intel’s newest fab that’ll make processors you’ll be buying in computers later this year. In this tour you’ll see workers putting on their “bunny suits”, hear why cleanliness is so important, and hear what these new chips will do. Mark claims this fab puts Intel one to two years ahead of its competitors. Why is that? Because they are getting rid of Silicon Dioxide dielectrics. What does that mean? Well, watch the video and you’ll see the secret to Intel’s new 45 nanometer chips. Wikipedia, has a good page on High-K dielectrics, which is what Intel s moving to, in order to make processors generate less heat, take less power, all while having more transistors than last year’s designs. Intel has the world’s first High-K metal gate architecture and it’s all due to this fab. Thanks to Intel for giving me a great look behind the scenes here. What does this mean for you? These chips will bring you about 20 percent more performance.

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2 Responses to “Intel says goodbye to Silicon Dioxide in new 45 nanometer fab”

Ken Kaplan:
January 27th, 2007 at 11:57 am

You had me at the edge of my seat — for 40 minutes! What’s Mark going to say? What will we see next? Lots of good questions asked and Intel veteran Mark shares his insights with delight.
Brian Compian:
January 28th, 2007 at 3:50 pm

A very interesting interview with Mark Bohr. If you haven’t seen this yet you should take the time to watch the video. A nice brief look at the AMHS used at D1D.